Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

T. Koida, S. F. Chichibu*, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura

*この研究の対応する著者

研究成果査読

59 被引用数 (Scopus)

抄録

The use of GAN templates, prepared by lateral epitaxial overgrowth (LEO) method, for improving quantum efficiency in nonpolar (112̄o) AlGaN/GaN multiple quantum wells (MQW), was investigated. The polarized optical reflectance (OR) and photoluminescence (PL) spectra of LEO-GaN were analyzed for the study. A moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature Pl lifetime with decreasing well width were observed. Both phenomena were found to be the results of eliminating quantum-confined Stark effects due to the polarization fields that existed in polar (0001) MQWs.

本文言語English
ページ(範囲)3768-3770
ページ数3
ジャーナルApplied Physics Letters
84
19
DOI
出版ステータスPublished - 2004 5 10

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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