TY - JOUR
T1 - Improved self-aligned structure for gaalas high-power lasers
AU - Yoshizawa, Misuzu
AU - Uomi, Kazuhisa
AU - Ohishi, Akio
AU - Ono, Yuuichi
AU - Kawano, Toshihiro
AU - Nakashima, Keiichi
AU - Kajimura, Takashi
PY - 1987/9
Y1 - 1987/9
N2 - An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mW in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.
AB - An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mW in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.
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U2 - 10.1143/JJAP.26.L1465
DO - 10.1143/JJAP.26.L1465
M3 - Article
AN - SCOPUS:0023419146
VL - 26
SP - 1465
EP - 1467
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9A
ER -