Improved self-aligned structure for gaalas high-power lasers

Misuzu Yoshizawa, Kazuhisa Uomi, Akio Ohishi, Yuuichi Ono, Toshihiro Kawano, Keiichi Nakashima, Takashi Kajimura

研究成果: Article査読

13 被引用数 (Scopus)

抄録

An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mW in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.

本文言語English
ページ(範囲)1465-1467
ページ数3
ジャーナルJapanese journal of applied physics
26
9A
DOI
出版ステータスPublished - 1987 9
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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