抄録
An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mw in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Japanese Journal of Applied Physics, Part 2: Letters |
| ページ | 1465-1467 |
| ページ数 | 3 |
| 巻 | 26 |
| エディション | 9 |
| 出版物ステータス | Published - 1987 9 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Engineering(all)
これを引用
IMPROVED SELF-ALIGNED STRUCTURE FOR GaAlAs HIGH-POWER LASERS. / Yoshizawa, Misuzu; Uomi, Kazuhisa; Ohishi, Akio; Ono, Yuuichi; Kawano, Toshihiro; Nakashima, Keiichi; Kajimura, Takashi.
Japanese Journal of Applied Physics, Part 2: Letters. 巻 26 9. 編 1987. p. 1465-1467.研究成果: Chapter
}
TY - CHAP
T1 - IMPROVED SELF-ALIGNED STRUCTURE FOR GaAlAs HIGH-POWER LASERS.
AU - Yoshizawa, Misuzu
AU - Uomi, Kazuhisa
AU - Ohishi, Akio
AU - Ono, Yuuichi
AU - Kawano, Toshihiro
AU - Nakashima, Keiichi
AU - Kajimura, Takashi
PY - 1987/9
Y1 - 1987/9
N2 - An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mw in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.
AB - An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mw in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.
UR - http://www.scopus.com/inward/record.url?scp=0023419146&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0023419146&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:0023419146
VL - 26
SP - 1465
EP - 1467
BT - Japanese Journal of Applied Physics, Part 2: Letters
ER -