Improvement in size distribution and optical properties of InAs/GaAs QDs by post growth thermal treatment

Shanmugam Saravanan, Takahisa Harayama

研究成果: Article

1 引用 (Scopus)

抄録

We investigated the effect of rapid thermal annealing from 700 °C to 950 °C on stacked InAs/GaAs quantum dots (QDs) covered with GaAs and In0.19Ga0.81As layers. Large blue-shift of the energy positions nearly 380 meV (1187 nm to 870 nm) have been observed in InGaAs capped samples together with improvement in the photoluminescence integrated intensity of more than five times. The strong narrowing of the photoluminescence line-width in both GaAs (as narrow as 8 meV) and InGaAs capped samples show an improvement of the size distribution of the QDs. In addition, a significant reduction of the energy spacing (ΔE2-1) between ground state and first excited state emissions were found in both GaAs and InGaAs capped quantum dots due to interface inter-diffusion induced by thermal treatment. The excited state filling experiments for InGaAs capped sample annealed at 950 °C exhibits quantum well like behavior where as, the GaAs capped sample shows a shoulder in high energy side might be due to first excited state of QDs.

元の言語English
ページ(範囲)725-728
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
246
発行部数4
DOI
出版物ステータスPublished - 2009 4
外部発表Yes

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distribution (property)
Semiconductor quantum dots
Optical properties
Heat treatment
quantum dots
Excited states
optical properties
Photoluminescence
excitation
photoluminescence
Rapid thermal annealing
shoulders
blue shift
Linewidth
Ground state
Semiconductor quantum wells
energy
spacing
quantum wells
annealing

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

これを引用

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abstract = "We investigated the effect of rapid thermal annealing from 700 °C to 950 °C on stacked InAs/GaAs quantum dots (QDs) covered with GaAs and In0.19Ga0.81As layers. Large blue-shift of the energy positions nearly 380 meV (1187 nm to 870 nm) have been observed in InGaAs capped samples together with improvement in the photoluminescence integrated intensity of more than five times. The strong narrowing of the photoluminescence line-width in both GaAs (as narrow as 8 meV) and InGaAs capped samples show an improvement of the size distribution of the QDs. In addition, a significant reduction of the energy spacing (ΔE2-1) between ground state and first excited state emissions were found in both GaAs and InGaAs capped quantum dots due to interface inter-diffusion induced by thermal treatment. The excited state filling experiments for InGaAs capped sample annealed at 950 °C exhibits quantum well like behavior where as, the GaAs capped sample shows a shoulder in high energy side might be due to first excited state of QDs.",
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N2 - We investigated the effect of rapid thermal annealing from 700 °C to 950 °C on stacked InAs/GaAs quantum dots (QDs) covered with GaAs and In0.19Ga0.81As layers. Large blue-shift of the energy positions nearly 380 meV (1187 nm to 870 nm) have been observed in InGaAs capped samples together with improvement in the photoluminescence integrated intensity of more than five times. The strong narrowing of the photoluminescence line-width in both GaAs (as narrow as 8 meV) and InGaAs capped samples show an improvement of the size distribution of the QDs. In addition, a significant reduction of the energy spacing (ΔE2-1) between ground state and first excited state emissions were found in both GaAs and InGaAs capped quantum dots due to interface inter-diffusion induced by thermal treatment. The excited state filling experiments for InGaAs capped sample annealed at 950 °C exhibits quantum well like behavior where as, the GaAs capped sample shows a shoulder in high energy side might be due to first excited state of QDs.

AB - We investigated the effect of rapid thermal annealing from 700 °C to 950 °C on stacked InAs/GaAs quantum dots (QDs) covered with GaAs and In0.19Ga0.81As layers. Large blue-shift of the energy positions nearly 380 meV (1187 nm to 870 nm) have been observed in InGaAs capped samples together with improvement in the photoluminescence integrated intensity of more than five times. The strong narrowing of the photoluminescence line-width in both GaAs (as narrow as 8 meV) and InGaAs capped samples show an improvement of the size distribution of the QDs. In addition, a significant reduction of the energy spacing (ΔE2-1) between ground state and first excited state emissions were found in both GaAs and InGaAs capped quantum dots due to interface inter-diffusion induced by thermal treatment. The excited state filling experiments for InGaAs capped sample annealed at 950 °C exhibits quantum well like behavior where as, the GaAs capped sample shows a shoulder in high energy side might be due to first excited state of QDs.

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