In-gap state and effect of light illumination in CuIr2S 4 probed by photoemission spectroscopy

K. Takubo, Takashi Mizokawa, N. Matsumoto, S. Nagata

研究成果: Article

11 引用 (Scopus)

抄録

We have studied disorder-induced in-gap states and effect of light illumination in the insulating phase of spinel-type CuIr2S 4 using ultraviolet photoemission spectroscopy (UPS). The Ir 3+/Ir4+ charge-ordered gap appears below the metal-insulator transition temperature. However, in the insulating phase, in-gap spectral features with softgap are observed in UPS just below the Fermi level (EF), corresponding to the variable range hopping transport observed in resistivity. The spectral weight at EF is not increased by light illumination, indicating that the Ir4+-Ir4+ dimer is very robust, although the long-range octamer order would be destructed by the photoexcitation. Present results suggest that the Ir4+-Ir 4+ bipolaronic hopping and disorder effects are responsible for the conductivity of CuIr2S4.

元の言語English
記事番号245117
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
78
発行部数24
DOI
出版物ステータスPublished - 2008 12 1
外部発表Yes

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Photoelectron spectroscopy
Ultraviolet spectroscopy
photoelectric emission
Lighting
illumination
Metal insulator transition
Photoexcitation
Fermi level
disorders
Dimers
spectroscopy
Superconducting transition temperature
photoexcitation
spinel
transition temperature
dimers
insulators
conductivity
electrical resistivity
metals

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

これを引用

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abstract = "We have studied disorder-induced in-gap states and effect of light illumination in the insulating phase of spinel-type CuIr2S 4 using ultraviolet photoemission spectroscopy (UPS). The Ir 3+/Ir4+ charge-ordered gap appears below the metal-insulator transition temperature. However, in the insulating phase, in-gap spectral features with softgap are observed in UPS just below the Fermi level (EF), corresponding to the variable range hopping transport observed in resistivity. The spectral weight at EF is not increased by light illumination, indicating that the Ir4+-Ir4+ dimer is very robust, although the long-range octamer order would be destructed by the photoexcitation. Present results suggest that the Ir4+-Ir 4+ bipolaronic hopping and disorder effects are responsible for the conductivity of CuIr2S4.",
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AU - Mizokawa, Takashi

AU - Matsumoto, N.

AU - Nagata, S.

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N2 - We have studied disorder-induced in-gap states and effect of light illumination in the insulating phase of spinel-type CuIr2S 4 using ultraviolet photoemission spectroscopy (UPS). The Ir 3+/Ir4+ charge-ordered gap appears below the metal-insulator transition temperature. However, in the insulating phase, in-gap spectral features with softgap are observed in UPS just below the Fermi level (EF), corresponding to the variable range hopping transport observed in resistivity. The spectral weight at EF is not increased by light illumination, indicating that the Ir4+-Ir4+ dimer is very robust, although the long-range octamer order would be destructed by the photoexcitation. Present results suggest that the Ir4+-Ir 4+ bipolaronic hopping and disorder effects are responsible for the conductivity of CuIr2S4.

AB - We have studied disorder-induced in-gap states and effect of light illumination in the insulating phase of spinel-type CuIr2S 4 using ultraviolet photoemission spectroscopy (UPS). The Ir 3+/Ir4+ charge-ordered gap appears below the metal-insulator transition temperature. However, in the insulating phase, in-gap spectral features with softgap are observed in UPS just below the Fermi level (EF), corresponding to the variable range hopping transport observed in resistivity. The spectral weight at EF is not increased by light illumination, indicating that the Ir4+-Ir4+ dimer is very robust, although the long-range octamer order would be destructed by the photoexcitation. Present results suggest that the Ir4+-Ir 4+ bipolaronic hopping and disorder effects are responsible for the conductivity of CuIr2S4.

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