In-plane X-ray diffraction profiles from organosilane monolayer/SiO 2 models

Hideaki Yamamoto*, Takanobu Watanabe, Iwao Ohdomari

*この研究の対応する著者

研究成果: Article査読

抄録

The effect of siloxane bonding topology on in-plane X-ray diffraction (XRD) profiles of octadecylsilane self-assembled monolayers (SAMs) on SiO2 was investigated by large-scale atomistic simulation. Equilibrium structures of the octadecylsilane SAM/SiO2 systems were obtained by Metropolis Monte Carlo simulations, sampling SAM/SiO2 structures with different interfacial bonding topologies. Lateral ordering of the octadecylsilane molecules was evaluated by calculating in-plane XRD profiles from the structural models. Analyses of the diffraction profiles revealed that molecules retain a hexagonal order at thermal equilibrium and that the structural order decreases as the number of siloxane bonds increases at the SAM/SiO2 interface.

本文言語English
ページ(範囲)1050021-1050023
ページ数3
ジャーナルApplied Physics Express
1
10
DOI
出版ステータスPublished - 2008 10月 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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