抄録
The effect of siloxane bonding topology on in-plane X-ray diffraction (XRD) profiles of octadecylsilane self-assembled monolayers (SAMs) on SiO2 was investigated by large-scale atomistic simulation. Equilibrium structures of the octadecylsilane SAM/SiO2 systems were obtained by Metropolis Monte Carlo simulations, sampling SAM/SiO2 structures with different interfacial bonding topologies. Lateral ordering of the octadecylsilane molecules was evaluated by calculating in-plane XRD profiles from the structural models. Analyses of the diffraction profiles revealed that molecules retain a hexagonal order at thermal equilibrium and that the structural order decreases as the number of siloxane bonds increases at the SAM/SiO2 interface.
本文言語 | English |
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ページ(範囲) | 1050021-1050023 |
ページ数 | 3 |
ジャーナル | Applied Physics Express |
巻 | 1 |
号 | 10 |
DOI | |
出版ステータス | Published - 2008 10月 1 |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)