In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method

N. Kobayashi, Toshiki Makimoto, Y. Yamauchi, Y. Horikoshi

研究成果: Article

38 引用 (Scopus)

抄録

Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of p-polarized light incident at the Brewster angle. This configuration minimizes the bulk GaAs contribution to the total light reflection. The small change in reflected light intensity between Ga and As atomic surfaces during GaAs growth is thus detected with a high signal-to-noise ratio. By using this characteristic, GaAs growth rate can be monitored in-situ on an atomic scale. In addition to the in-situ monitoring of growth rate, the decomposition processes of Ga and As precursors in MOVPE can be studied by SPA. We demonstrate an investigation of the decomposition process of Ga organometallic, and discuss the growth mechanism of atomic layer epitaxy.

元の言語English
ページ(範囲)62-67
ページ数6
ジャーナルJournal of Crystal Growth
107
発行部数1-4
DOI
出版物ステータスPublished - 1991 1 1
外部発表Yes

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Metallorganic vapor phase epitaxy
photoabsorption
Monitoring
Atomic layer epitaxy
Light reflection
Decomposition
Organometallics
Light polarization
Epitaxial growth
Signal to noise ratio
decomposition
Brewster angle
atomic layer epitaxy
polarized light
luminous intensity
signal to noise ratios
gallium arsenide
reflectance
configurations

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method. / Kobayashi, N.; Makimoto, Toshiki; Yamauchi, Y.; Horikoshi, Y.

:: Journal of Crystal Growth, 巻 107, 番号 1-4, 01.01.1991, p. 62-67.

研究成果: Article

Kobayashi, N. ; Makimoto, Toshiki ; Yamauchi, Y. ; Horikoshi, Y. / In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method. :: Journal of Crystal Growth. 1991 ; 巻 107, 番号 1-4. pp. 62-67.
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