In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method

S. Tokita*, M. Kobayashi, A. Yoshikawa

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) method. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se source gas cracking, whereas the signal was hardly affected by the Zn source gas cracking. Zn-terminated surfaces formed by uncracked dimethylzinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surface formed by the uncracked H2Se gas supply is probably covered with H2Se molecules.

本文言語English
ページ(範囲)376-380
ページ数5
ジャーナルJournal of Crystal Growth
136
1-4
DOI
出版ステータスPublished - 1994 3 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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