In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in Pb (Zr,Ti) O3 films

Mitsumasa Nakajima*, Hiroshi Nakaki, Yoshitaka Ehara, Tomoaki Yamada, Ken Nishida, Takashi Yamamoto, Minoru Osada, Hiroshi Funakubo

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

We employed in situ Raman spectroscopy under electric field for (100)/(001)-oriented tetragonal Pb (Ti0.61 Zr0.39) O 3 films with (001)-volume fraction (VC) of 35%. The increase in VC was revealed above 200 kV/cm, which resulted in the larger remanent polarization. In addition, the application of high enough field also brings a feature, i.e., large reversible change in VC with/without electric field that can quantitatively explain the enhanced piezoelectric response. These demonstrate the usefulness of in situ Raman observation to probe the domain contributions to the electrical and piezoelectric responses.

本文言語English
論文番号181907
ジャーナルApplied Physics Letters
97
18
DOI
出版ステータスPublished - 2010 11月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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