In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in Pb (Zr,Ti) O3 films

Mitsumasa Nakajima; Hiroshi Nakaki; Yoshitaka Ehara; Tomoaki Yamada; Ken Nishida; Takashi Yamamoto; Minoru Osada; Hiroshi Funakubo

doi:10.1063/1.3502591

In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in Pb (Zr,Ti) O₃ films

Mitsumasa Nakajima^*, Hiroshi Nakaki, Yoshitaka Ehara, Tomoaki Yamada, Ken Nishida, Takashi Yamamoto, Minoru Osada, Hiroshi Funakubo

^*この研究の対応する著者

研究成果: Article › 査読

17 被引用数 (Scopus)

抄録

We employed in situ Raman spectroscopy under electric field for (100)/(001)-oriented tetragonal Pb (Ti_0.61 Zr_0.39) O ₃ films with (001)-volume fraction (V_C) of 35%. The increase in V_C was revealed above 200 kV/cm, which resulted in the larger remanent polarization. In addition, the application of high enough field also brings a feature, i.e., large reversible change in V_C with/without electric field that can quantitatively explain the enhanced piezoelectric response. These demonstrate the usefulness of in situ Raman observation to probe the domain contributions to the electrical and piezoelectric responses.

本文言語	English
論文番号	181907
ジャーナル	Applied Physics Letters
巻	97
号	18
DOI	https://doi.org/10.1063/1.3502591
出版ステータス	Published - 2010 11月 1
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.3502591

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AU - Nakajima, Mitsumasa

AU - Nakaki, Hiroshi

AU - Ehara, Yoshitaka

AU - Yamada, Tomoaki

AU - Nishida, Ken

AU - Yamamoto, Takashi

AU - Osada, Minoru

AU - Funakubo, Hiroshi

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