In situ tuning of magnetization and magnetoresistance in fe3o4 thin film achieved with all-solid-state redox device

Takashi Tsuchiya*, Kazuya Terabe, Masanori Ochi, Tohru Higuchi, Minoru Osada, Yoshiyuki Yamashita, Shigenori Ueda, Masakazu Aono

*この研究の対応する著者

研究成果: Article査読

62 被引用数 (Scopus)

抄録

An all-solid-state redox device composed of Fe3O4 thin film and Li+ ion conducting solid electrolyte was fabricated for use in tuning magnetization and magnetoresistance (MR), which are key factors in the creation of high-density magnetic storage devices. Electrical conductivity, magnetization, and MR were reversibly tuned by Li+ insertion and removal. Tuning of the various Fe3O4 thin film properties was achieved by donation of an electron to the Fe3+ ions. This technique should lead to the development of spintronics devices based on the reversible switching of magnetization and spin polarization (P). It should also improve the performance of conventional magnetic random access memory (MRAM) devices in which the ON/OFF ratio has been limited to a small value due to a decrease in P near the tunnel barrier.

本文言語English
ページ(範囲)1655-1661
ページ数7
ジャーナルACS Nano
10
1
DOI
出版ステータスPublished - 2016 1月 26
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)
  • 物理学および天文学(全般)

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