InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Y. Hiraishi, T. Shirai, J. Kwoen, Y. Matushima, Hiroshi Ishikawa, Y. Arakawa, K. Utaka

研究成果: Conference contribution

抄録

In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575°C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of 1.0 × 1014/cm2 and subsequent annealing.

本文言語English
ホスト出版物のタイトル2019 Compound Semiconductor Week, CSW 2019 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728100807
DOI
出版ステータスPublished - 2019 5
イベント2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
継続期間: 2019 5 192019 5 23

出版物シリーズ

名前2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
国/地域Japan
CityNara
Period19/5/1919/5/23

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学
  • 原子分子物理学および光学

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