The highly ordered mesoporous material HISiO2 was prepared at room temperature and low pH utilizing a high concentration of nonionic surfactant to achieve a hexagonal ordered phase with a pore size of ∼3.5 nm. The grafted amino ligand was covalently bonded to the internal pore surface of HISiO2 through a silanation procedure. Thereby, immobilized transition-metal-aquo complexes such as MnII-aquo (I), CuII-aquo (II), CoII-aquo (III), and ZnII-aquo (IV) were coordinated to the supported wall without impregnation on the surface. Diffuse reflectance spectroscopy (DRS) and electron paramagnetic resonance (EPR) studies observed that a proportion of the MnII complex was oxidized to a higher oxidation state, particularly MnIV. The kinetics and mechanism of redox reactions between o-aminophenol, o-phenylenediamine, and p-pheneylenediamine and the incorporated transition-metal-aquo-propylamine complexes have been investigated. The oxidation products of the amines have been monitored by UV-vis spectroscopy. The reaction follows first-order kinetics, and the rate constant of the oxidation of amines decreases in the following order: MnIV/MnII → CuII → CoII → ZnII. This trend is attributed to the reduction potential of the metal ions in the reaction medium. The most obvious feature of the oxidation reaction of amines with complexes III and IV is that there is a well-defined induction time, whose rate depends on the reactivity and the initial concentration of these amines, prior to a rapid growth in the production of the oxidation product of amines. The experimental results indicate that the outer-sphere mechanism is probably followed in this redox system. Extensive studies of the transition-metal complexes on HISiO2 have been conducted before and after the redox reaction by a wide variety of characterization techniques which include powder X-ray diffraction, DRS, the Brunauer-Emmett-Teller method for nitrogen adsorption and surface area measurements, NMR, EPR, and IR.
|ジャーナル||Journal of Physical Chemistry B|
|出版ステータス||Published - 2000 11 9|
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