Increased electron mobility in n -type Si-doped AlN by reducing dislocation density

Yoshitaka Taniyasu*, Makoto Kasu, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

60 被引用数 (Scopus)

抄録

For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.

本文言語English
論文番号182112
ジャーナルApplied Physics Letters
89
18
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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