抄録
The incubation time t1 was measured during the deposition of Silicon form silanes on to SiO2 using chemical vapor deposition. It was observed that incubation time causes selective deposition on patterned substrates. The partial pressure of the precursor and the substrate temperature were found to affect t1. The formation of Silicon nanoislands was observed during the incubation period. The results show that island growth is governed by direct deposition onto islands.
本文言語 | English |
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ページ(範囲) | 128-133 |
ページ数 | 6 |
ジャーナル | Chemical Vapor Deposition |
巻 | 10 |
号 | 3 |
DOI | |
出版ステータス | Published - 2004 6月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 化学 (全般)
- 表面および界面
- プロセス化学およびプロセス工学