Incubation time during the CVD of Si onto SiO2 from silane

Yuya Kajikawa*, Toshihiro Tsuchiya, Suguru Noda, Hiroshi Komiyama

*この研究の対応する著者

研究成果: Article査読

22 被引用数 (Scopus)

抄録

The incubation time t1 was measured during the deposition of Silicon form silanes on to SiO2 using chemical vapor deposition. It was observed that incubation time causes selective deposition on patterned substrates. The partial pressure of the precursor and the substrate temperature were found to affect t1. The formation of Silicon nanoislands was observed during the incubation period. The results show that island growth is governed by direct deposition onto islands.

本文言語English
ページ(範囲)128-133
ページ数6
ジャーナルChemical Vapor Deposition
10
3
DOI
出版ステータスPublished - 2004 6月 1
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 表面および界面
  • プロセス化学およびプロセス工学

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