Incubation time during the CVD of Si onto SiO₂ from silane

The incubation time t₁ was measured during the deposition of Silicon form silanes on to SiO₂ using chemical vapor deposition. It was observed that incubation time causes selective deposition on patterned substrates. The partial pressure of the precursor and the substrate temperature were found to affect t₁. The formation of Silicon nanoislands was observed during the incubation period. The results show that island growth is governed by direct deposition onto islands.