Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

M. Hagerott; H. Jeon; A. V. Nurmikko; W. Xie; D. C. Grillo; M. Kobayashi; R. L. Gunshor

doi:10.1063/1.106836

Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

M. Hagerott, H. Jeon, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor

研究成果: Article › 査読

44 被引用数 (Scopus)

抄録

Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n-Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.

本文言語	English
ページ（範囲）	2825-2827
ページ数	3
ジャーナル	Applied Physics Letters
巻	60
号	23
DOI	https://doi.org/10.1063/1.106836
出版ステータス	Published - 1992
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.106836

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AU - Jeon, H.

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AU - Grillo, D. C.

AU - Kobayashi, M.

AU - Gunshor, R. L.

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AB - Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n-Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.

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Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

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