Influence of buried structure on polarization sensitivity in strained bulk semiconductor optical amplifiers

Takaaki Kakitsuka*, Yasuo Shibata, Masayuki Itoh, Yoshiaki Kadota, Yuichi Tohmori, Yuzo Yoshikuni

*この研究の対応する著者

研究成果: Article査読

15 被引用数 (Scopus)

抄録

In order to achieve an accurate design of polarization-insensitive semiconductor optical amplifiers based on tensile-strained bulk InGaAsP, the reduction of strain in the active layer of the buried heterostructure and its influence on polarization sensitivity are analyzed numerically for the first time. The gain calculation, including the strain distribution in the active layer, is examined based on the k · p method for the different active layers. It is found that the strain introduced during the epitaxial growth is strongly reduced after regrowth of the burying layer. In an active layer having the aspect ratio of 1:4, the strain reduction causes more than a 0.5-dB deviation in the polarization sensitivity of the gain. From a comparison with the experimental results, it is shown that including the effect of the burying layer in the calculation gives an accurate determination of the amount of strain for the polarization independence.

本文言語English
ページ(範囲)85-92
ページ数8
ジャーナルIEEE Journal of Quantum Electronics
38
1
DOI
出版ステータスPublished - 2002 1 1
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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