The circuit design of MOS dynamic RAM has a great influence on its soft errors; effects of capacity of the dummy cell, the word line potential, sensitivity of the sense amplifier, and their mutual timing, on soft errors were observed in accelerated tests with radioisotopes. The soft error rate was reduced to one-tenth by raising the word line potential before operation of the sense amplifier is improved by preserving sufficient time for grounding of its flip-flop terminal and that the soft error rate is proportional to the bit line floating time. The error is minimized by adjusting properly the operation time of the sense amplifier.
|ジャーナル||Electronics & communications in Japan|
|出版ステータス||Published - 1983 9|
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