Influence of epitaxy on the surface conduction of diamond film

M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, T. Makimoto, N. Kobayashi

研究成果: Article

59 引用 (Scopus)

抜粋

The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination.

元の言語English
ページ(範囲)226-232
ページ数7
ジャーナルDiamond and Related Materials
13
発行部数2
DOI
出版物ステータスPublished - 2004 2

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

これを引用

Kasu, M., Kubovic, M., Aleksov, A., Teofilov, N., Taniyasu, Y., Sauer, R., Kohn, E., Makimoto, T., & Kobayashi, N. (2004). Influence of epitaxy on the surface conduction of diamond film. Diamond and Related Materials, 13(2), 226-232. https://doi.org/10.1016/j.diamond.2003.10.025