Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures

J. Qiu, Q. D. Qian, R. L. Gunshor, M. Kobayashi, D. R. Menke, D. Li, N. Otsuka

研究成果: Article査読

66 被引用数 (Scopus)

抄録

Epitaxial ZnSe/epitaxial GaAs interfaces have been formed by molecular beam expitaxy and evaluated by several techniques including capacitance-voltage measurements. In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.

本文言語English
ページ(範囲)1272-1274
ページ数3
ジャーナルApplied Physics Letters
56
13
DOI
出版ステータスPublished - 1990
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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