抄録
Epitaxial ZnSe/epitaxial GaAs interfaces have been formed by molecular beam expitaxy and evaluated by several techniques including capacitance-voltage measurements. In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.
本文言語 | English |
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ページ(範囲) | 1272-1274 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 56 |
号 | 13 |
DOI | |
出版ステータス | Published - 1990 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)