Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

T. Inushima, T. Takenobu, M. Motokawa, K. Koide, A. Hashimoto, A. Yamamoto, Y. Saito, T. Yamaguchi, Y. Nanishi

研究成果: Conference contribution

10 引用 (Scopus)

抄録

In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

元の言語English
ホスト出版物のタイトルPhysica Status Solidi C: Conferences
ページ364-367
ページ数4
エディション1
DOI
出版物ステータスPublished - 2002
外部発表Yes
イベント2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
継続期間: 2002 7 222002 7 25

Other

Other2nd International Workshop on Nitride Semiconductors, IWN 2002
Germany
Aachen
期間02/7/2202/7/25

Fingerprint

Aluminum Oxide
Superconductivity
Sapphire
sapphire
superconductivity
Metallorganic chemical vapor deposition
Molecular beam epitaxy
Superconducting materials
metalorganic chemical vapor deposition
Carrier concentration
Metals
anomalies
Plasmas
Crystals
electrical resistivity
metals
crystals

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

これを引用

Inushima, T., Takenobu, T., Motokawa, M., Koide, K., Hashimoto, A., Yamamoto, A., ... Nanishi, Y. (2002). Influence of growth condition on superconducting characteristics of InN on sapphire (0001). : Physica Status Solidi C: Conferences (1 版, pp. 364-367) https://doi.org/10.1002/pssc.200390064

Influence of growth condition on superconducting characteristics of InN on sapphire (0001). / Inushima, T.; Takenobu, T.; Motokawa, M.; Koide, K.; Hashimoto, A.; Yamamoto, A.; Saito, Y.; Yamaguchi, T.; Nanishi, Y.

Physica Status Solidi C: Conferences. 1. 編 2002. p. 364-367.

研究成果: Conference contribution

Inushima, T, Takenobu, T, Motokawa, M, Koide, K, Hashimoto, A, Yamamoto, A, Saito, Y, Yamaguchi, T & Nanishi, Y 2002, Influence of growth condition on superconducting characteristics of InN on sapphire (0001). : Physica Status Solidi C: Conferences. 1 Edn, pp. 364-367, 2nd International Workshop on Nitride Semiconductors, IWN 2002, Aachen, Germany, 02/7/22. https://doi.org/10.1002/pssc.200390064
Inushima T, Takenobu T, Motokawa M, Koide K, Hashimoto A, Yamamoto A その他. Influence of growth condition on superconducting characteristics of InN on sapphire (0001). : Physica Status Solidi C: Conferences. 1 版 2002. p. 364-367 https://doi.org/10.1002/pssc.200390064
Inushima, T. ; Takenobu, T. ; Motokawa, M. ; Koide, K. ; Hashimoto, A. ; Yamamoto, A. ; Saito, Y. ; Yamaguchi, T. ; Nanishi, Y. / Influence of growth condition on superconducting characteristics of InN on sapphire (0001). Physica Status Solidi C: Conferences. 1. 版 2002. pp. 364-367
@inproceedings{2099cca7421a419c86aee36cde831a31,
title = "Influence of growth condition on superconducting characteristics of InN on sapphire (0001)",
abstract = "In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.",
author = "T. Inushima and T. Takenobu and M. Motokawa and K. Koide and A. Hashimoto and A. Yamamoto and Y. Saito and T. Yamaguchi and Y. Nanishi",
year = "2002",
doi = "10.1002/pssc.200390064",
language = "English",
pages = "364--367",
booktitle = "Physica Status Solidi C: Conferences",
edition = "1",

}

TY - GEN

T1 - Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

AU - Inushima, T.

AU - Takenobu, T.

AU - Motokawa, M.

AU - Koide, K.

AU - Hashimoto, A.

AU - Yamamoto, A.

AU - Saito, Y.

AU - Yamaguchi, T.

AU - Nanishi, Y.

PY - 2002

Y1 - 2002

N2 - In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

AB - In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

UR - http://www.scopus.com/inward/record.url?scp=84875103961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875103961&partnerID=8YFLogxK

U2 - 10.1002/pssc.200390064

DO - 10.1002/pssc.200390064

M3 - Conference contribution

AN - SCOPUS:84875103961

SP - 364

EP - 367

BT - Physica Status Solidi C: Conferences

ER -