Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu*, O. P. Agnihotri, S. C. Jain, R. Mertens, Isamo Kato

*この研究の対応する著者

    研究成果: Article査読

    29 被引用数 (Scopus)

    抄録

    We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB cm-1 at 632.8 nm.

    本文言語English
    ジャーナルSemiconductor Science and Technology
    15
    3
    DOI
    出版ステータスPublished - 2000 3月

    ASJC Scopus subject areas

    • 電子工学および電気工学
    • 材料科学(全般)
    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学

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