Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu, O. P. Agnihotri, S. C. Jain, R. Mertens, Isamu Kato

    研究成果: Article査読

    抄録

    We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planer optical waveguides on silicon substrates having silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapor deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB/cm at 6328 nm.

    本文言語English
    ジャーナルUnknown Journal
    3975
    出版ステータスPublished - 2000

    ASJC Scopus subject areas

    • 電子工学および電気工学
    • 凝縮系物理学

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