Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

Y. Furukawa, H. Takao, J. Yamamoto, S. Furukawa

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Field-induced infrared absorption spectra from the metal-insulator- semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.

本文言語English
ページ(範囲)341-342
ページ数2
ジャーナルSynthetic Metals
135-136
DOI
出版ステータスPublished - 2003 4 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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