The infrared spectra of the light-emitting diodes and the metal-insulator-semiconductor devices based on a poly(p-phenylenevinylene) derivative MEH-PPV have been measured in situ with a reflection configuration. The voltage-induced infrared spectra of these devices have been measured by the FT-IR difference-spectrum method. The observed bands have been attributed to the carriers injected into the polymer layers. The observation of positive carriers in the polymer light-emitting diode is probably related to the predominance of injected positive carriers, which is one of the factors in the low efficiency of the polymer light-emitting diode. In situ infrared reflective absorption measurements provide the information about injected carriers, which play a central role in the properties and the functions of polymer electronic devices.
|出版ステータス||Published - 2002|
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