InGaAs-CAP-MONITOR INTEGRATED 1. 55 mu m lambda /4-SHIFTED DFB LASERS WITH HIGHER OUTPUT DESIGN.

Masashi Usami, Shigeyuki Akiba, Katsuyuki Utaka, Yuichi Matsushima

研究成果: Article

1 引用 (Scopus)

抄録

An InGaAs-cap-monitor photodiode is monolithically integrated with a 1. 55 mu m InGaAsP/InP lambda /4-shifted DFB laser that has a higher output design. The optical coupling between the laser and the monitor is calculated using a Gaussian beam approximation, which shows that 20-40 percent of the rear light output can be monitored. The actual ratio of monitor current to front output at a temperature of 10-40 degree C is typically 0. 1-0. 2 mA/mW. It is shown that the integrated cap-monitor can be used, not only for the control of the laser power, but also for probing the threshold current and the single-wavelength property of an individual laser in a wafer, without cleaving out into chips. For the laser part with an antireflecting coating on the front facet, the maximum output power of 30 mW at 25 degree C and the highest CW temperature (as high as 100 degree C in p-side-up bonding) were obtained.

元の言語English
ページ(範囲)289-297
ページ数9
ジャーナルIEE proceedings. Part J, Optoelectronics
135
発行部数4
出版物ステータスPublished - 1988 8
外部発表Yes

Fingerprint

Distributed feedback lasers
Lasers
Gaussian beams
Photodiodes
Coatings
Wavelength
Temperature

ASJC Scopus subject areas

  • Engineering(all)

これを引用

InGaAs-CAP-MONITOR INTEGRATED 1. 55 mu m lambda /4-SHIFTED DFB LASERS WITH HIGHER OUTPUT DESIGN. / Usami, Masashi; Akiba, Shigeyuki; Utaka, Katsuyuki; Matsushima, Yuichi.

:: IEE proceedings. Part J, Optoelectronics, 巻 135, 番号 4, 08.1988, p. 289-297.

研究成果: Article

Usami, Masashi ; Akiba, Shigeyuki ; Utaka, Katsuyuki ; Matsushima, Yuichi. / InGaAs-CAP-MONITOR INTEGRATED 1. 55 mu m lambda /4-SHIFTED DFB LASERS WITH HIGHER OUTPUT DESIGN. :: IEE proceedings. Part J, Optoelectronics. 1988 ; 巻 135, 番号 4. pp. 289-297.
@article{338bc4d807d942a59e1e7dd9b3ac93c7,
title = "InGaAs-CAP-MONITOR INTEGRATED 1. 55 mu m lambda /4-SHIFTED DFB LASERS WITH HIGHER OUTPUT DESIGN.",
abstract = "An InGaAs-cap-monitor photodiode is monolithically integrated with a 1. 55 mu m InGaAsP/InP lambda /4-shifted DFB laser that has a higher output design. The optical coupling between the laser and the monitor is calculated using a Gaussian beam approximation, which shows that 20-40 percent of the rear light output can be monitored. The actual ratio of monitor current to front output at a temperature of 10-40 degree C is typically 0. 1-0. 2 mA/mW. It is shown that the integrated cap-monitor can be used, not only for the control of the laser power, but also for probing the threshold current and the single-wavelength property of an individual laser in a wafer, without cleaving out into chips. For the laser part with an antireflecting coating on the front facet, the maximum output power of 30 mW at 25 degree C and the highest CW temperature (as high as 100 degree C in p-side-up bonding) were obtained.",
author = "Masashi Usami and Shigeyuki Akiba and Katsuyuki Utaka and Yuichi Matsushima",
year = "1988",
month = "8",
language = "English",
volume = "135",
pages = "289--297",
journal = "IEE Proceedings, Part J: Optoelectronics",
issn = "0267-3932",
publisher = "Institute of Electrical Engineers",
number = "4",

}

TY - JOUR

T1 - InGaAs-CAP-MONITOR INTEGRATED 1. 55 mu m lambda /4-SHIFTED DFB LASERS WITH HIGHER OUTPUT DESIGN.

AU - Usami, Masashi

AU - Akiba, Shigeyuki

AU - Utaka, Katsuyuki

AU - Matsushima, Yuichi

PY - 1988/8

Y1 - 1988/8

N2 - An InGaAs-cap-monitor photodiode is monolithically integrated with a 1. 55 mu m InGaAsP/InP lambda /4-shifted DFB laser that has a higher output design. The optical coupling between the laser and the monitor is calculated using a Gaussian beam approximation, which shows that 20-40 percent of the rear light output can be monitored. The actual ratio of monitor current to front output at a temperature of 10-40 degree C is typically 0. 1-0. 2 mA/mW. It is shown that the integrated cap-monitor can be used, not only for the control of the laser power, but also for probing the threshold current and the single-wavelength property of an individual laser in a wafer, without cleaving out into chips. For the laser part with an antireflecting coating on the front facet, the maximum output power of 30 mW at 25 degree C and the highest CW temperature (as high as 100 degree C in p-side-up bonding) were obtained.

AB - An InGaAs-cap-monitor photodiode is monolithically integrated with a 1. 55 mu m InGaAsP/InP lambda /4-shifted DFB laser that has a higher output design. The optical coupling between the laser and the monitor is calculated using a Gaussian beam approximation, which shows that 20-40 percent of the rear light output can be monitored. The actual ratio of monitor current to front output at a temperature of 10-40 degree C is typically 0. 1-0. 2 mA/mW. It is shown that the integrated cap-monitor can be used, not only for the control of the laser power, but also for probing the threshold current and the single-wavelength property of an individual laser in a wafer, without cleaving out into chips. For the laser part with an antireflecting coating on the front facet, the maximum output power of 30 mW at 25 degree C and the highest CW temperature (as high as 100 degree C in p-side-up bonding) were obtained.

UR - http://www.scopus.com/inward/record.url?scp=0024067562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024067562&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0024067562

VL - 135

SP - 289

EP - 297

JO - IEE Proceedings, Part J: Optoelectronics

JF - IEE Proceedings, Part J: Optoelectronics

SN - 0267-3932

IS - 4

ER -