(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

T. Kita, D. Chiba, Y. Ohno, H. Ohno

研究成果: Article

7 引用 (Scopus)

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The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.

元の言語English
記事番号062102
ジャーナルApplied Physics Letters
90
発行部数6
DOI
出版物ステータスPublished - 2007 2 19
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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