InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Masatoshi Suzuki, Hideaki Tanaka, Yuichi Matsushima

研究成果: Article査読

37 被引用数 (Scopus)

抄録

The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small α-value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 μm. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16,000-4550-km transmission experiments at 2.5-10 Gb/s.

本文言語English
ページ(範囲)586-588
ページ数3
ジャーナルIEEE Photonics Technology Letters
4
6
DOI
出版ステータスPublished - 1992 6
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 物理学および天文学(その他)
  • 原子分子物理学および光学

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