InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer

Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.

本文言語English
ホスト出版物のタイトル26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(印刷版)9781479957293
DOI
出版ステータスPublished - 2014 1月 1
外部発表はい
イベント26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier, France
継続期間: 2014 5月 112014 5月 15

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

Conference

Conference26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
国/地域France
CityMontpellier
Period14/5/1114/5/15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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