InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hidetoshi Nakano, Toshiki Makimoto

研究成果: Article

35 引用 (Scopus)

抜粋

A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.

元の言語English
記事番号101110
ジャーナルApplied Physics Letters
89
発行部数10
DOI
出版物ステータスPublished - 2006 9 15
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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