InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hidetoshi Nakano, Toshiki Makimoto

研究成果: Article査読

38 被引用数 (Scopus)

抄録

A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.

本文言語English
論文番号101110
ジャーナルApplied Physics Letters
89
10
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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