Inhomogeneous charge distribution in a self-doped EuFBiS2 superconductor

T. Sugimoto, E. Paris, K. Terashima, A. Barinov, A. Giampietri, T. Wakita, T. Yokoya, J. Kajitani, R. Higashinaka, T. D. Matsuda, Y. Aoki, T. Mizokawa, N. L. Saini

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Stoichiometric EuFBiS 2 with mixed valent Eu shows self-doped superconductivity at low temperatures due to the Eu-to-Bi charge transfer. The metallic/nonmetallic bistability of the BiS 2 layer can couple with the valence fluctuation of Eu and provide a highly susceptible electronic state. Here, we report space-resolved photoemission measurements on EuFBiS 2 revealing an inhomogeneous charge distribution with the coexistence of metallic and nonmetallic phases at mesoscopic length scales. Angle-resolved photoemission measurements using a submicron beam size have confirmed a clear Fermi surface around the zone boundaries in the metallic region, typically observed in a doped system, while it can be hardly seen in the nonmetallic region. Density functional theory calculations suggest that the out-of-plane S atom position in the structure is one of the important factors for the self-doping in this material.

本文言語English
論文番号064520
ジャーナルPhysical Review B
100
6
DOI
出版ステータスPublished - 2019 8 22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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