Initial atomic structure of CaF2/Si(111) interface formation

K. Miura; R. Souda; T. Aizawa; C. Oshima; Y. Ishizawa

doi:10.1016/0038-1098(89)91042-9

Initial atomic structure of CaF₂/Si(111) interface formation

K. Miura^*, R. Souda, T. Aizawa, C. Oshima, Y. Ishizawa

^*この研究の対応する著者

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

Ion scattering spectroscopy (ISS) and electron energy loss spectroscopy (EELS) have revealed that the initial stage of an interface formation is an adsorption state. The adsorption state shows a gradual transition to the interface state as a film form with increasing CaF₂ deposition. The EELS spectrum of the adsorption state is quite different from that of a CaF₂(111) surface and shows no change by an irradiation of a low energy electron beam.

本文言語	English
ページ（範囲）	605-608
ページ数	4
ジャーナル	Solid State Communications
巻	72
号	6
DOI	https://doi.org/10.1016/0038-1098(89)91042-9
出版ステータス	Published - 1989

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学

文献へのアクセス

10.1016/0038-1098(89)91042-9

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引用スタイル

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title = "Initial atomic structure of CaF2/Si(111) interface formation",

abstract = "Ion scattering spectroscopy (ISS) and electron energy loss spectroscopy (EELS) have revealed that the initial stage of an interface formation is an adsorption state. The adsorption state shows a gradual transition to the interface state as a film form with increasing CaF2 deposition. The EELS spectrum of the adsorption state is quite different from that of a CaF2(111) surface and shows no change by an irradiation of a low energy electron beam.",

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AU - Souda, R.

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PY - 1989

Y1 - 1989

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AB - Ion scattering spectroscopy (ISS) and electron energy loss spectroscopy (EELS) have revealed that the initial stage of an interface formation is an adsorption state. The adsorption state shows a gradual transition to the interface state as a film form with increasing CaF2 deposition. The EELS spectrum of the adsorption state is quite different from that of a CaF2(111) surface and shows no change by an irradiation of a low energy electron beam.

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