Initial growth of heteroepitaxial diamond on Ir (0 0 1)/MgO (0 0 1) substrates using antenna-edge-type microwave plasma assisted chemical vapor deposition

Toyokatsu Fujisaki*, Minoru Tachiki, Norikazu Taniyama, Minoru Kudo, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

27 被引用数 (Scopus)

抄録

Initial growth of heteroepitaxial diamond on Ir (0 0 1)/MgO (0 0 1) was investigated by scanning electron microscopy, reflection high-energy electron diffraction (RHEED) and atomic force microscopy. Bias-enhanced nucleation (BEN) was performed by antenna-edge-type microwave plasma assisted chemical vapor deposition. In BEN, diamond crystallites nucleated and grew along the [-1 1 0] and [1 1 0] directions of iridium. Diamond was likely to nucleate on protruded iridium areas. After BEN, in addition to the diamond diffraction spots, iridium bulk diffraction spots, which were not observed before BEN, were observed by RHEED. The iridium surface appeared to be protruded and changed by the high ion current density in BEN. Under [0 0 1] selective growth conditions, diamond crystallites, which were less than 10 nm in diameter, were etched by H2 plasma. Diamond nucleated areas corresponded to the surface ridges of iridium along the [-1 1 0] and [1 1 0] directions at 10-40 nm intervals before BEN.

本文言語English
ページ(範囲)246-250
ページ数5
ジャーナルDiamond and Related Materials
12
3-7
DOI
出版ステータスPublished - 2003

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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