Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer

Tsuyoshi Suesada, Naofumi Nakamura, Hiroyuki Nagasawa, Hiroshi Kawarada

    研究成果: Chapter

    49 引用 (Scopus)

    抄録

    Negative substrate-bias effects on diamond heteroepitaxial nucleation have been investigated using microwave plasma-assisted chemical vapor deposition. The density and the percentage of azimuthally ordered particles grown on carburized Si(001) or on high-quality β-SiC(001) have been estimated by varying the bias-treatment conditions (reaction pressure, microwave power and bias voltage). The percentage of azimuthally ordered particles increases under the following conditions: pressure of 50 Torr, substrate temperature of approx.900°C and bias voltage of -50 V. Smooth heteroepitaxial diamond films of approx.4 μm thickness have been successfully synthesized on high-quality β-SiC(001) by the bias treatment under the above conditions followed by a two-step growth process: 〈001〉 mode, where [1̄10]- or [110]-directed protrusions have been formed on β-SiC(001). Diamond islands grew along the grooves between the β-SiC protrusions in the initial stage.

    元の言語English
    ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    出版場所Minato-ku, Japan
    出版者JJAP
    ページ4898-4904
    ページ数7
    34
    エディション9 A
    出版物ステータスPublished - 1995 9

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    Buffer layers
    Bias voltage
    Diamonds
    Microwaves
    Diamond films
    Substrates
    Chemical vapor deposition
    Nucleation
    Plasmas
    Temperature

    ASJC Scopus subject areas

    • Engineering(all)

    これを引用

    Suesada, T., Nakamura, N., Nagasawa, H., & Kawarada, H. (1995). Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (9 A 版, 巻 34, pp. 4898-4904). Minato-ku, Japan: JJAP.

    Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. / Suesada, Tsuyoshi; Nakamura, Naofumi; Nagasawa, Hiroyuki; Kawarada, Hiroshi.

    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 巻 34 9 A. 編 Minato-ku, Japan : JJAP, 1995. p. 4898-4904.

    研究成果: Chapter

    Suesada, T, Nakamura, N, Nagasawa, H & Kawarada, H 1995, Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A Edn, 巻. 34, JJAP, Minato-ku, Japan, pp. 4898-4904.
    Suesada T, Nakamura N, Nagasawa H, Kawarada H. Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A 版 巻 34. Minato-ku, Japan: JJAP. 1995. p. 4898-4904
    Suesada, Tsuyoshi ; Nakamura, Naofumi ; Nagasawa, Hiroyuki ; Kawarada, Hiroshi. / Initial growth of heteroepitaxial diamond on Si(001) substrates via β-SiC buffer layer. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 巻 34 9 A. 版 Minato-ku, Japan : JJAP, 1995. pp. 4898-4904
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