Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li; S. Noda; H. Komiyama; T. Yamamoto; Y. Ikuhara

doi:10.1116/1.1598975

Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation

T. Q. Li^*, S. Noda, H. Komiyama, T. Yamamoto, Y. Ikuhara

^*この研究の対応する著者

研究成果: Article › 査読

35 被引用数 (Scopus)

抄録

The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N₂ partial pressure. The analysis showed that for films formed at N₂ partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.

本文言語	English
ページ（範囲）	1717-1723
ページ数	7
ジャーナル	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
巻	21
号	5
DOI	https://doi.org/10.1116/1.1598975
出版ステータス	Published - 2003 9月
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜

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10.1116/1.1598975

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引用スタイル

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