The initial growth stage of titanium nitride (TiN) deposited by reactive magnetron sputtering onto (111)-oriented Si substrates was discussed. It was found that the growth of the crystal grains depended on the N2 partial pressure. The analysis showed that for films formed at N2 partial pressure equal to 0.47 Pa, an amorphous interlayer 1.5-1.8 nm thick formed between the TiN layer and Si substrate.
|ジャーナル||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版ステータス||Published - 2003 9|
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