Initial stage of oxygen adsorption onto a si(111)-7 × 7 surface studied by scanning tunneling microscopy

Tsuyoshi Hasegawa, Makiko Kohno, Shigeyuki Hosoki

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The initial stage of oxygen adsorption onto a Si(111)-7×7 surface has been studied at room temperature by scanning tunneling microscopy. The surface was exposed to oxygen under a partial pressure of 1 × 10-9 Torr. Initial exposure led to bright and dark features at adatom sites. This dark feature, which was previously reported as a main channel for oxidation, only appeared in the faulted half of the dimer adatom stacking-fault (DAS) structure. The images suggest that the adsorption onto the un-faulted half starts after the faulted half are occupied with oxygen atoms. This clearly indicates that oxygen adsorption occurs at adatom sites with higher energy states.

本文言語English
ページ(範囲)3702-3705
ページ数4
ジャーナルJapanese journal of applied physics
33
6 S
DOI
出版ステータスPublished - 1994 6
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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