InP/InGaAs Double-Heterojunction Bipolar Transistors Grown on (100) Si by Metalorganic Chemical Vapor Deposition

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

研究成果: Article査読

14 被引用数 (Scopus)

抄録

We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT’s), grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.

本文言語English
ページ(範囲)369-371
ページ数3
ジャーナルIEEE Electron Device Letters
12
7
DOI
出版ステータスPublished - 1991 7
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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