InP/InGaAs double-heterojunction bipolar transistors grown on (100) Si by metalorganic chemical vapor deposition

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

研究成果: Article

14 引用 (Scopus)

抄録

The authors report the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBTs) grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The Si substrates used were p-type (boron doped) FZ grown wafers with a resistivity of 5000 Ω × cm, oriented 2° off the (100) plane toward the [110] direction. Epitaxial layers for DHBTs were grown on the Si substrate with a thin GaAs buffer layer. A two-step growth process was applied for the InP layers on GaAs-on-Si wafers. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase in generation-recombination current at the emitter-base interface.

元の言語English
ページ(範囲)369-371
ページ数3
ジャーナルElectron device letters
12
発行部数7
出版物ステータスPublished - 1991 7
外部発表Yes

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Metallorganic chemical vapor deposition
Heterojunction bipolar transistors
Substrates
Transistors
Boron
Epitaxial layers
Buffer layers
Fabrication
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

これを引用

InP/InGaAs double-heterojunction bipolar transistors grown on (100) Si by metalorganic chemical vapor deposition. / Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao.

:: Electron device letters, 巻 12, 番号 7, 07.1991, p. 369-371.

研究成果: Article

Makimoto, Toshiki ; Kurishima, Kenji ; Kobayashi, Takashi ; Ishibashi, Tadao. / InP/InGaAs double-heterojunction bipolar transistors grown on (100) Si by metalorganic chemical vapor deposition. :: Electron device letters. 1991 ; 巻 12, 番号 7. pp. 369-371.
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