Inp/ingaas double heterojunction bipolar transistors grown on si

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.

本文言語English
ページ(範囲)3815-3817
ページ数3
ジャーナルJapanese journal of applied physics
30
12
DOI
出版ステータスPublished - 1991 12
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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