InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

研究成果: Conference contribution

1 引用 (Scopus)

抄録

We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

元の言語English
ホスト出版物のタイトルConference on Solid State Devices and Materials
出版場所Tokyo, Japan
出版者Publ by Business Cent for Acad Soc Japan
ページ74-76
ページ数3
出版物ステータスPublished - 1991
外部発表Yes
イベント23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
継続期間: 1991 8 271991 8 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
Yokohama, Jpn
期間91/8/2791/8/29

Fingerprint

Heterojunction bipolar transistors
Transistors
Metallorganic chemical vapor deposition
Substrates
Buffer layers
Fabrication

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Makimoto, T., Kurishima, K., Kobayashi, T., & Ishibashi, T. (1991). InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. : Conference on Solid State Devices and Materials (pp. 74-76). Tokyo, Japan: Publ by Business Cent for Acad Soc Japan.

InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. / Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao.

Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1991. p. 74-76.

研究成果: Conference contribution

Makimoto, T, Kurishima, K, Kobayashi, T & Ishibashi, T 1991, InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. : Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, Tokyo, Japan, pp. 74-76, 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, 91/8/27.
Makimoto T, Kurishima K, Kobayashi T, Ishibashi T. InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. : Conference on Solid State Devices and Materials. Tokyo, Japan: Publ by Business Cent for Acad Soc Japan. 1991. p. 74-76
Makimoto, Toshiki ; Kurishima, Kenji ; Kobayashi, Takashi ; Ishibashi, Tadao. / InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1991. pp. 74-76
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Y1 - 1991

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