InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Toshiki Makimoto; Kenji Kurishima; Takashi Kobayashi; Tadao Ishibashi

doi:10.7567/ssdm.1991.c-1-3

InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

研究成果: Paper › 査読

1 被引用数 (Scopus)

抄録

We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

本文言語	English
ページ	74-76
ページ数	3
DOI	https://doi.org/10.7567/ssdm.1991.c-1-3
出版ステータス	Published - 1991
外部発表	はい
イベント	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn 継続期間: 1991 8 27 → 1991 8 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

工学（全般）

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10.7567/ssdm.1991.c-1-3

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@conference{96645b0a899e4a2d8eadc06348979e2c,

title = "InP/InGaAs double heterojunction bipolar transistors grown on Si substrates",

abstract = "We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.",

author = "Toshiki Makimoto and Kenji Kurishima and Takashi Kobayashi and Tadao Ishibashi",

year = "1991",

doi = "10.7567/ssdm.1991.c-1-3",

language = "English",

pages = "74--76",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

AU - Makimoto, Toshiki

AU - Kurishima, Kenji

AU - Kobayashi, Takashi

AU - Ishibashi, Tadao

PY - 1991

Y1 - 1991

N2 - We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

AB - We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

UR - http://www.scopus.com/inward/record.url?scp=0025842226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025842226&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1991.c-1-3

DO - 10.7567/ssdm.1991.c-1-3

M3 - Paper

AN - SCOPUS:0025842226

SP - 74

EP - 76

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

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