InP/InGaAs double heterojunction bipolar transistors grown on Si substrates

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

研究成果: Paper

1 引用 (Scopus)

抜粋

We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.

元の言語English
ページ74-76
ページ数3
出版物ステータスPublished - 1991 1 1
外部発表Yes
イベント23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
継続期間: 1991 8 271991 8 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
Yokohama, Jpn
期間91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Makimoto, T., Kurishima, K., Kobayashi, T., & Ishibashi, T. (1991). InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. 74-76. 論文発表場所 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .