抜粋
We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.
| 元の言語 | English |
|---|---|
| ページ | 74-76 |
| ページ数 | 3 |
| 出版物ステータス | Published - 1991 1 1 |
| 外部発表 | Yes |
| イベント | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn 継続期間: 1991 8 27 → 1991 8 29 |
Other
| Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
|---|---|
| 市 | Yokohama, Jpn |
| 期間 | 91/8/27 → 91/8/29 |
ASJC Scopus subject areas
- Engineering(all)
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これを引用
Makimoto, T., Kurishima, K., Kobayashi, T., & Ishibashi, T. (1991). InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. 74-76. 論文発表場所 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .