抄録
We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Conference on Solid State Devices and Materials |
| 出版場所 | Tokyo, Japan |
| 出版者 | Publ by Business Cent for Acad Soc Japan |
| ページ | 74-76 |
| ページ数 | 3 |
| 出版物ステータス | Published - 1991 |
| 外部発表 | Yes |
| イベント | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn 継続期間: 1991 8 27 → 1991 8 29 |
Other
| Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
|---|---|
| 市 | Yokohama, Jpn |
| 期間 | 91/8/27 → 91/8/29 |
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ASJC Scopus subject areas
- Engineering(all)
これを引用
InP/InGaAs double heterojunction bipolar transistors grown on Si substrates. / Makimoto, Toshiki; Kurishima, Kenji; Kobayashi, Takashi; Ishibashi, Tadao.
Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1991. p. 74-76.研究成果: Conference contribution
}
TY - GEN
T1 - InP/InGaAs double heterojunction bipolar transistors grown on Si substrates
AU - Makimoto, Toshiki
AU - Kurishima, Kenji
AU - Kobayashi, Takashi
AU - Ishibashi, Tadao
PY - 1991
Y1 - 1991
N2 - We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.
AB - We report, for the first time, the successful fabrication of InP/InGaAs double heterojunction bipolar transistors grown on Si substrates by metalorganic chemical vapor deposition. When the InP buffer layer on Si is thick enough, the transistors exhibit high current gains over 250 and their ideality factor is 1.3; these values are comparable to those in transistors grown on InP substrates.
UR - http://www.scopus.com/inward/record.url?scp=0025842226&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025842226&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0025842226
SP - 74
EP - 76
BT - Conference on Solid State Devices and Materials
PB - Publ by Business Cent for Acad Soc Japan
CY - Tokyo, Japan
ER -