We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.
ASJC Scopus subject areas
- Physics and Astronomy(all)