Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

Kenji Kurishima, Toshiki Makimoto, Takashi Kobayashi, Tadao Ishibashi

研究成果: Article

13 引用 (Scopus)

抜粋

We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.

元の言語English
ページ(範囲)L258-L261
ジャーナルJapanese journal of applied physics
30
発行部数2B
DOI
出版物ステータスPublished - 1991 2
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用