Integration of GaN-SiC and GaN-diamond by surface activated bonding methods

Fengwen Mu, Tadatomo Suga

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Integration of GaN with SiC and diamond is one solution for the heat dissipation of high-power and high-frequency GaN device. In this research, both of GaN-SiC integration and GaN-diamond integration have been realized by surface activated bonding methods at room temperature. The bonding interfaces were investigated to understand the bonding mechanisms.

本文言語English
ホスト出版物のタイトル2019 International Conference on Electronics Packaging, ICEP 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ198-199
ページ数2
ISBN(電子版)9784990218867
DOI
出版ステータスPublished - 2019 4 1
イベント2019 International Conference on Electronics Packaging, ICEP 2019 - Niigata, Japan
継続期間: 2019 4 172019 4 20

出版物シリーズ

名前2019 International Conference on Electronics Packaging, ICEP 2019

Conference

Conference2019 International Conference on Electronics Packaging, ICEP 2019
国/地域Japan
CityNiigata
Period19/4/1719/4/20

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 金属および合金

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