An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering