International technology roadmap for semiconductors 2005 edition

Takanobu Watanabe*, Kosuke Tatsumura, Iwao Ohdomari

*この研究の対応する著者

研究成果: Article査読

70 被引用数 (Scopus)

抄録

We propose a new oxidation rate equation for silicon supposing only a diffusion of oxidizing species but not including any rate-limiting step by interfacial reaction. It is supposed that diffusivity is suppressed in a strained oxide region near the SiO2 Si interface. The expression of a parabolic constant in the new equation is the same as that of the Deal-Grove model, while a linear constant makes a clear distinction with that of the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layers.

本文言語English
論文番号196102
ジャーナルPhysical Review Letters
96
19
DOI
出版ステータスPublished - 2006 5月 30

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「International technology roadmap for semiconductors 2005 edition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル