Investigation of effect of strain on low-threshold 1.3μm InGaAsP strained-layer quantum well lasers

T. Tsuchiya, M. Komori, K. Uomi, A. Oka, T. Kawano, A. Oishi

研究成果: Article査読

23 被引用数 (Scopus)

抄録

The authors have investigated the effect of strain on 1.3μm InGaAsP lasers under the same well thickness (6nm) and same lasing wavelength (1.34μm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23meV), and minimum threshold current density (450A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3mA) was also achieved in a 90-70% coated 200μm-long device.

本文言語English
ページ(範囲)788-789
ページ数2
ジャーナルElectronics Letters
30
10
DOI
出版ステータスPublished - 1994 5 12
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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