Investigation of growth processes in flow-rate modulation epitaxy and atomic layer epitaxy by new in-situ optical monitoring method

Naoki Kobayashi, Toshiki Makimoto, Yoshiharu Yamauchi, Yoshiji Horikoshi

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of p-polarized light at the Brewster angle. This configuration minimizes the bulk GaAs contribution in light reflection. The small change in reflection light intensity between Ga and As atomic surfaces during GaAs growth is thus detected with a high signal-to-noise ratio. It was found that the SPA signal is very sensitive to the surface chemical species on the growing surface, because the optical reflectivity of the alkyl Ga surface differs from that of the metal Ga surface. By using this characteristic of SPA, we investigated the growth processes in flow-rate modulation epitaxy and atomic layer epitaxy of GaAs.

本文言語English
ページ(範囲)139-145
ページ数7
ジャーナルActa Polytechnica Scandinavica, Chemical Technology and Metallurgy Series
195
出版ステータスPublished - 1990 12 1
外部発表はい
イベントFirst International Symposium on Atomic Layer Epitaxy - Espoo, Finl
継続期間: 1990 6 111990 6 13

ASJC Scopus subject areas

  • 化学工学(全般)

フィンガープリント

「Investigation of growth processes in flow-rate modulation epitaxy and atomic layer epitaxy by new in-situ optical monitoring method」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル