Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of p-polarized light at the Brewster angle. This configuration minimizes the bulk GaAs contribution in light reflection. The small change in reflection light intensity between Ga and As atomic surfaces during GaAs growth is thus detected with a high signal-to-noise ratio. It was found that the SPA signal is very sensitive to the surface chemical species on the growing surface, because the optical reflectivity of the alkyl Ga surface differs from that of the metal Ga surface. By using this characteristic of SPA, we investigated the growth processes in flow-rate modulation epitaxy and atomic layer epitaxy of GaAs.
|ジャーナル||Acta Polytechnica Scandinavica, Chemical Technology and Metallurgy Series|
|出版ステータス||Published - 1990 12 1|
|イベント||First International Symposium on Atomic Layer Epitaxy - Espoo, Finl|
継続期間: 1990 6 11 → 1990 6 13
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