Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

Lian Ji, Ming Tan, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang

    研究成果: Article

    10 引用 (Scopus)

    抄録

    We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.

    元の言語English
    ページ(範囲)68-72
    ページ数5
    ジャーナルSolar Energy Materials and Solar Cells
    137
    DOI
    出版物ステータスPublished - 2015

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    Molecular beam epitaxy
    Solar cells
    Growth temperature
    Photoluminescence
    Sun
    Lighting
    Air
    Temperature

    ASJC Scopus subject areas

    • Renewable Energy, Sustainability and the Environment
    • Electronic, Optical and Magnetic Materials
    • Surfaces, Coatings and Films

    これを引用

    Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy. / Ji, Lian; Tan, Ming; Honda, Kazuki; Harasawa, Ryo; Yasue, Yuya; Wu, Yuanyuan; Dai, Pan; Tackeuchi, Atsushi; Bian, Lifeng; Lu, Shulong; Yang, Hui.

    :: Solar Energy Materials and Solar Cells, 巻 137, 2015, p. 68-72.

    研究成果: Article

    Ji, L, Tan, M, Honda, K, Harasawa, R, Yasue, Y, Wu, Y, Dai, P, Tackeuchi, A, Bian, L, Lu, S & Yang, H 2015, 'Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy', Solar Energy Materials and Solar Cells, 巻. 137, pp. 68-72. https://doi.org/10.1016/j.solmat.2015.01.031
    Ji, Lian ; Tan, Ming ; Honda, Kazuki ; Harasawa, Ryo ; Yasue, Yuya ; Wu, Yuanyuan ; Dai, Pan ; Tackeuchi, Atsushi ; Bian, Lifeng ; Lu, Shulong ; Yang, Hui. / Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy. :: Solar Energy Materials and Solar Cells. 2015 ; 巻 137. pp. 68-72.
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    title = "Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy",
    abstract = "We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8{\%} has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.",
    keywords = "Carrier recombination dynamics, InGaAsP, Molecular beam epitaxy, Quantum efficiency, Solar cell",
    author = "Lian Ji and Ming Tan and Kazuki Honda and Ryo Harasawa and Yuya Yasue and Yuanyuan Wu and Pan Dai and Atsushi Tackeuchi and Lifeng Bian and Shulong Lu and Hui Yang",
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    T1 - Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

    AU - Ji, Lian

    AU - Tan, Ming

    AU - Honda, Kazuki

    AU - Harasawa, Ryo

    AU - Yasue, Yuya

    AU - Wu, Yuanyuan

    AU - Dai, Pan

    AU - Tackeuchi, Atsushi

    AU - Bian, Lifeng

    AU - Lu, Shulong

    AU - Yang, Hui

    PY - 2015

    Y1 - 2015

    N2 - We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.

    AB - We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.

    KW - Carrier recombination dynamics

    KW - InGaAsP

    KW - Molecular beam epitaxy

    KW - Quantum efficiency

    KW - Solar cell

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