@article{6328f01e930c42c3a33476c2d1e003e7,
title = "Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy",
abstract = "We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.",
keywords = "Carrier recombination dynamics, InGaAsP, Molecular beam epitaxy, Quantum efficiency, Solar cell",
author = "Lian Ji and Ming Tan and Kazuki Honda and Ryo Harasawa and Yuya Yasue and Yuanyuan Wu and Pan Dai and Atsushi Tackeuchi and Lifeng Bian and Shulong Lu and Hui Yang",
note = "Funding Information: The authors would like to thank Naoki Yamamoto and Hao Wu of Waseda University for their help in the TRPL measurements. This work is supported in part by the National Natural Science Foundation of China (Grant nos. 61404157 , 61376081 and 61176128 ), the National High Technology Research and Development Program of China (Grant no. 2013AA050403 ), the Application Foundation of Suzhou (Grant no. SYG201437 ), the knowledge Innovation Project of the CAS (Grant no. Y2BAQ11001 ), and the SINANO Program (Grant nos. Y1AAQ11002 and Y2AAQ11004 ). Publisher Copyright: {\textcopyright}2015 Elsevier B.V. All rights reserved.",
year = "2015",
month = jun,
doi = "10.1016/j.solmat.2015.01.031",
language = "English",
volume = "137",
pages = "68--72",
journal = "Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
}
