Ion-beam annealing of diamond using Ar ions up to 400 keV

Masahiko Ogura, Masataka Hasegawa, Yasunori Tanaka, Naoto Kobayashi

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Damaged layers in crystalline diamond (100) samples were formed in the depth range of 0-90 nm by irradiation with 40 keV 12C ions to a dose of 1.3 × 1015 cm-2 at room temperature (RT), and successively annealed with and without 400 keV 40 Ar ions with doses up to 3.0 × 1015 cm-2 at 773 K. Rutherford backscattering spectrometry (RBS)-channeling measurements have revealed that damaged layers were annealed much faster with ion beam assistance than without it. It has been shown that the annealing process using a several hundred keV ion beam as low as 773 K can be applied to the crystallization of diamond. This suggests the promising applicability of an annealing process with ion beams to the introduction of p- and n-type dopants and requisite successive crystallization.

本文言語English
ページ(範囲)1043-1047
ページ数5
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
161
DOI
出版ステータスPublished - 2000 3月
外部発表はい

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 器械工学
  • 表面および界面

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