Ion beam induced epitaxial crystallization of surface amorphous layers has been investigated in BP 〈100〉. Recrystallization of the amorphous layer produced with 70 keV Ar+ ion implantation was induced by the subsequent 400 keV Kr+ ion irradiation in the sample temperature range of 300-400°C. Epitaxial regrowth occurred at temperatures much below those required for the pure thermal process. A large dechanneling yield due to Kr irradiation was observed in a P-sublattice. The crystal regrowth rate monitored by RBS-channeling technique showed a linear dependence on the ion irradiation fluence. The activation energy of ion beam induced crystal regrowth in BP was determined to be 0.17 ± 0.06 eV. The observed regrowth rate is smaller by a factor of about 4 than in Si 〈111〉, in which the ion beam induced crystallization was observed for reference under the same experimental condition.
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