Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100)

Naoto Kobayashi, Hasegawa Masataka, Kobayashi Hisao, Hayashi Nobuyuki, Shinohara Makoto, Ohtani Fumihiko, Asari Masatoshi

研究成果: Article

6 引用 (Scopus)

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Epitaxial crystallization of deposited amorphous GaAs layers on GaAs(100) up to the surface by bombardments with 400 keV Ar and 400 keV Kr has been successfully performed at a temperature range between 125 and 200°C. Properties of crystal growth were investigated as a function of ion species (Ar and Kr), energy (400 and 800 keV), ion dose, dose rate and substrate temperature by RBS channeling experiments. The growth rate has shown a nearly linear dependence on ion fluence. Ion bombardments below 100°C have induced further amorphization beyond the initial crystal/amorphous interface. On the scale of nuclear energy deposition density, bombardments with higher electronic excitation efficiency give a small increase of the growth rate. Ar bombardments have shown a strong dependence of the growth rate on dose rate, whereas Kr bombardments have revealed a weak dependence. An apparent activation energy of 0.13 ± 0.06 eV for the crystal growth was observed.

元の言語English
ページ(範囲)449-453
ページ数5
ジャーナルNuclear Inst. and Methods in Physics Research, B
59-60
発行部数PART 1
DOI
出版物ステータスPublished - 1991 7 1
外部発表Yes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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  • これを引用

    Kobayashi, N., Masataka, H., Hisao, K., Nobuyuki, H., Makoto, S., Fumihiko, O., & Masatoshi, A. (1991). Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100). Nuclear Inst. and Methods in Physics Research, B, 59-60(PART 1), 449-453. https://doi.org/10.1016/0168-583X(91)95257-E