Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties

Naoto Kobayashi*, H. Katsumata, Y. Makita, M. Hasegawa, N. Hayashi, H. Shibata, S. Uekusa, S. Hishita

*この研究の対応する著者

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Epitaxial layers of Si 1-x-yGe xC y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si 1-x-yGe xC y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si 1-x-yGe xC y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I 1 peak with/without I 1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
出版社Materials Research Society
ページ189-194
ページ数6
388
出版ステータスPublished - 1995
外部発表はい
イベントProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
継続期間: 1995 4 171995 4 21

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period95/4/1795/4/21

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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