Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ions

K. Kuriyama, Hiromi Takahashi, K. Shimoyama, N. Hayashi, M. Hasegawa, Naoto Kobayashi

研究成果: Article

6 引用 (Scopus)

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The ion-beam-induced epitaxial crystallization (IBIEC) of B+-implanted Si(100) layers, which are preamorphized by Ge+ ion implantation, has been studied by a 400 keV Ar+-ion irradiation at temperature ranges from 300 to 475°C. A minimum Rutherford backscattering yield of the regrowth layer is improved to 7.8% for an Ar+ ion dose of 1.3×1016/cm2 at a substrate temperature of 400°C. The activation energy for IBIEC is estimated to be 0.22 eV. A peak of the depth B profile evaluated by secondary ion mass spectroscopy is shifted to about 35 nm toward the surface after Ar+ ion irradiation. However, the electrical activation of the implanted B atoms is restricted within about 10%. It is also demonstrated that the lateral crystallinity of the amorphous layer can be recovered selectively by the IBIEC technique.

元の言語English
ページ(範囲)994-997
ページ数4
ジャーナルNuclear Inst. and Methods in Physics Research, B
80-81
発行部数PART 2
DOI
出版物ステータスPublished - 1993
外部発表Yes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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  • これを引用

    Kuriyama, K., Takahashi, H., Shimoyama, K., Hayashi, N., Hasegawa, M., & Kobayashi, N. (1993). Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ions. Nuclear Inst. and Methods in Physics Research, B, 80-81(PART 2), 994-997. https://doi.org/10.1016/0168-583X(93)90723-J