Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling

N. Hayashi, R. Suzuki, M. Hasegawa, Naoto Kobayashi, S. Tanigawa, T. Mikado

研究成果: Article

23 引用 (Scopus)

抜粋

Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.

元の言語English
ページ(範囲)45-48
ページ数4
ジャーナルPhysical Review Letters
70
発行部数1
出版物ステータスPublished - 1993
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hayashi, N., Suzuki, R., Hasegawa, M., Kobayashi, N., Tanigawa, S., & Mikado, T. (1993). Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling. Physical Review Letters, 70(1), 45-48.